Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based-GaN Heterojunction Diodes by Optimizing MgO Interlayer ThicknessReportar como inadecuado




Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based-GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Nanoscale Research Letters

, 11:480

First Online: 29 October 2016Received: 31 August 2016Accepted: 21 October 2016

Abstract

We demonstrate the fabrication and characterization of localized surface plasmon LSP-enhanced n-ZnO quantum dot QD-MgO-p-GaN heterojunction light-emitting diodes LEDs by embedding Ag nanoparticles Ag-NPs into the ZnO-MgO interface. The maximum enhancement ration of the Ag-NP-decorated LEDs in electroluminescence EL is 4.3-fold by optimizing MgO electron-blocking layer thickness. The EL origination was investigated qualitatively in terms of photoluminescence PL results. Through analysis of the energy band structure of device and carrier transport mechanisms, it suggests that the EL enhancement is attributed to the increased rate of spontaneous emission and improved internal quantum efficiency induced by exciton-LSP coupling.

KeywordsZnO Quantum dots Heterostructure Localized surface plasmon AbbreviationsAg-NPsAg nanoparticles

EBLElectron-blocking layer

ELElectroluminescence

LEDsLight-emitting diodes

LSPLocalized surface plasmon

NBENear band emission

PLPhotoluminescence

QDsQuantum dots

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Autor: Cheng Chen - Jingwen Chen - Jun Zhang - Shuai Wang - Wei Zhang - Renli Liang - Jiangnan Dai - Changqing Chen

Fuente: https://link.springer.com/







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