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Nanoscale Research Letters

, 9:517

First Online: 21 September 2014Received: 27 May 2014Accepted: 12 September 2014


This paper studies the effect of atomic layer deposition ALD temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors FETs and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm-V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm-V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing.

KeywordsZinc oxide nanowire Top-down fabrication Field-effect transistor Atomic layer deposition Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-9-517 contains supplementary material, which is available to authorized users.

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Autor: Suhana M Sultan - Nonofo J Ditshego - Robert Gunn - Peter Ashburn - Harold MH Chong

Fuente: https://link.springer.com/

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