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Abstract: We developed means to produce wafer scale, high-quality graphene films aslarge as 3 inch wafer size on Ni and Cu films under ambient-pressure andtransfer them onto arbitrary substrates through instantaneous etching of metallayers. We also demonstrated the applications of the large-area graphene filmsfor the batch fabrication of field-effect transistor FET arrays andstretchable strain gauges showing extraordinary performances. Transistorsshowed the hole and electron mobilities of the device of 1,100 cm2-Vs and 550cm2-Vs at drain bias of -0.75V, respectively. The piezo-resistance gauge factorof strain sensor was ~6.1. These methods represent a significant step towardthe realization of graphene devices in wafer scale as well as application inoptoelectronics, flexible and stretchable electronics.



Autor: Youngbin Lee, Sukang Bae, Houk Jang, Sukjae Jang, Shou-En Zhu, Sung Hyun Sim, Young Il Song, Byung Hee Hong, Jong-Hyun Ahn

Fuente: https://arxiv.org/



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