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Nanoscale Research Letters

, 9:578

2014 International Symposium on Next-Generation Electronics ISNE 2014


The atomic structure of a SiGe-Si epitaxial interface grown via molecular beam epitaxy on a single crystal silicon substrate was investigated using an aberration-corrected scanning transmittance electron microscope equipped with a high-angle annular dark-field detector and an energy-dispersive spectrometer. The accuracy required for compensation of the various residual aberration coefficients to achieve sub-angstrom resolution with the electron optics system was also evaluated. It was found that the interfacial layer was composed of a silicon single crystal, connected coherently to epitaxial SiGe nanolaminates. In addition, the distance between the dumbbell structures of the Si and Ge atoms was approximately 0.136 nm at the SiGe-Si interface in the 110 orientation. The corresponding fast Fourier transform exhibited a sub-angstrom scale point resolution of 0.78 Å. Furthermore, the relative positions of the atoms in the chemical composition line scan signals could be directly interpreted from the corresponding incoherent high-angle annular dark-field image.

KeywordsAberration correction HRTEM HRSTEM HAADF Z contrast EELS EDS Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-9-578 contains supplementary material, which is available to authorized users.

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Autor: Chien-Nan Hsiao - Shou-Yi Kuo - Fang-I Lai - Wei-Chun Chen


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