Spin Transistor and Quantum Spin Hall Effects in CdBxF2-x - p-CdF2 - CdBxF2-x Sandwich Nanostructures - Condensed Matter > Mesoscale and Nanoscale PhysicsReportar como inadecuado




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Abstract: Planar CdBxF2-x - p-CdF2 - CdBxF2-x sandwich nanostructures prepared on thesurface of the n-type CdF2 bulk crystal are studied to register the spintransistor and quantum spin Hall effects. The current-voltage characteristicsof the ultra-shallow p+-n junctions verify the CdF2 gap, 7.8 eV, and thequantum subbands of the 2D holes in the p-type CdF2 quantum well confined bythe CdBxF2-x delta-barriers. The temperature and magnetic field dependencies ofthe resistance, specific heat and magnetic susceptibility demonstrate the hightemperature superconductor properties for the CdBxF2-x delta-barriers. Thevalue of the superconductor energy gap, 102.06 meV, determined by the tunnelingspectroscopy method appears to be in a good agreement with the relationshipbetween the zero-resistance supercurrent in superconductor state and theconductance in normal state at the energies of the 2D hole subbands. Theresults obtained are evidence of the important role of the multiple Andreevreflections in the creation of the high spin polarization of the 2D holes inthe edged channels of the sandwich device. The high spin hole polarization inthe edged channels is shown to identify the mechanism of the spin transistorand quantum spin Hall effects induced by varying the top gate voltage, which isrevealed by the first observation of the Hall quantum conductance staircase.



Autor: N.T. Bagraev, O.N. Guimbitskaya, L.E. Klyachkin, A.A. Kudryavtsev, A.M. Malyarenko, V.V.Romanov, A.I. Ryskin, I.A. Shelykh, A.S.

Fuente: https://arxiv.org/







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