Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots-SiC multilayersReportar como inadecuado




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Nanoscale Research Letters

, 9:634

First Online: 25 November 2014Received: 23 October 2014Accepted: 18 November 2014

Abstract

Si quantum dots Si QDs-SiC multilayers were fabricated by annealing hydrogenated amorphous Si-SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs-SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si-i-Si QDs-SiC multilayers-p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency PCE of 6.28%.

PACS81.07.Ta; 78.67.Pt; 88.40.jj

KeywordsSi quantum dots Si QDs Silicon carbide Multilayers Solar cell AbbreviationsEQEExternal quantum efficiency

PCEPower conversion efficiency

Si QDs-SiC MLsSi quantum dots-SiC multilayers.

Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-9-634 contains supplementary material, which is available to authorized users.

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Autor: Yunqing Cao - Peng Lu - Xiaowei Zhang - Jun Xu - Ling Xu - Kunji Chen

Fuente: https://link.springer.com/



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