Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranesReport as inadecuate

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Nanoscale Research Letters

, 9:695

2nd International Conference on ALD Applications and 3rd China ALD conference


The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors FeFETs with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric polyvinylidene fluoride trifluoroethylene PVDF-TrFE thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

KeywordsSilicon nanomembrane Ferroelectric polymer Ferroelectric field effect transistor Junctionless Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-9-695 contains supplementary material, which is available to authorized users.

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Author: Ronggen Cao - Gaoshan Huang - Zengfeng Di - Guodong Zhu - Yongfeng Mei

Source: https://link.springer.com/

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