Carrier thermal escape in families of InAs-InP self-assembled quantum dots - Condensed Matter > Mesoscale and Nanoscale PhysicsReportar como inadecuado




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Abstract: We investigate the thermal quenching of the multimodal photoluminescence fromInAs-InP 001 self-assembled quantum dots. The temperature evolution of thephotoluminescence spectra of two samples is followed from 10 K to 300 K. Wedevelop a coupled rate-equation model that includes the effect of carrierthermal escape from a quantum dot to the wetting layer and to the InP matrix,followed by transport, recapture or non-radiative recombination. Our modelreproduces the temperature dependence of the emission of each family of quantumdots with a single set of parameters. We find that the main escape mechanism ofthe carriers confined in the quantum dots is through thermal emission to thewetting layer. The activation energy for this process is found to be close toone-half the energy difference between that of a given family of quantum dotsand that of the wetting layer as measured by photoluminescence excitationexperiments. This indicates that electron and holes exit the InAs quantum dotsas correlated pairs.



Autor: Guillaume Gélinas, Ali Lanacer, Richard Leonelli, Remo A. Masut, Sylvain Raymond, Philip J. Poole

Fuente: https://arxiv.org/







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