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1 LCTS - Laboratoire des Composites Thermostructuraux

Abstract : Silicon carbide exists under a great variety of polytypes that can be described by a sequence of orientations of diatomic Si-C layers in a stacking direction. A dynamical model is proposed for the formation of polytypes during the layer-by-layer growth of the material that occurs in CVD-CVI. A recurrence law is determined for the sequence of layer deformations ; the orientation sequence is derived from it. The evolution of this law allows one to reproduce qualitatively the whole polytypism of SiC: short- or long- period periodic polytypes, as well as one-dimensionally disordered polytypes. A two-parameter bifurcation diagram has been studied : its fractal structure allows one to visualize various types of -roads to chaos-.

Keywords : Silicon carbide polytypism dynamical system bifurcation diagram symbolic dynamics





Autor: Gerard L. Vignoles - Roger Naslain -

Fuente: https://hal.archives-ouvertes.fr/



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