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Nanoscale Research Letters

, 8:504

First Online: 01 December 2013Received: 06 September 2013Accepted: 15 November 2013


The number of quantum dots which nucleate at a certain place has to be controllable for device integration. It was shown that the number of quantum dots per nucleation site depends on the size of the hole in the substrate, but other dimensions of the nucleation site are vague. We report on the influence of hole shape on site-selectively grown InAs quantum dots QDs by molecular beam epitaxy. Dry etching of the GaAs wafers was used because of its high anisotropic etching characteristic. Therefore, it was possible to verify the influence of several hole shape parameters on the subsequent QD growth independently. We show that the nucleation of these QDs depends on several properties of the hole, namely its surface area, aspect ratio of the surface area, and depth. Especially, the aspect ratio shows a big influence on the number of nucleating QDs per site. With knowledge of these dependencies, it is possible to influence the number of QDs per site and also its distribution.

KeywordsMolecular beam epitaxy MBE QD Quantum dot InAs Site selective Lithography Dry etching ICP AbbreviationsAFMAtomic force microscopy

EBLElectron beam lithography

ICPInductively coupled plasma

MBEMolecular beam epitaxy

MIBKMethyl isobutyl ketone

PMMA-MAPolymethyl methacrylate with metacrylic acid

QDQuantum dot

RIEReactive ion etching

SEMScanning electron microscope.

Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-8-504 contains supplementary material, which is available to authorized users.

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Autor: Christian J Mayer - Mathieu F Helfrich - Daniel M Schaadt


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