Structural variations of Si1−xCx and their light absorption controllabilityReportar como inadecuado

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Nanoscale Research Letters

, 7:503

First Online: 06 September 2012Received: 11 July 2012Accepted: 31 August 2012


The emergence of third-generation photovoltaics based on Si relies on tunable bandgap materials with embedded nanocrystalline Si. One of the most promising approaches is based on the mixed-phase Si1 − xCx. We have investigated the light absorption controllability of nanocrystalline Si-embedded Si1 − xCx produced by thermal annealing of the Si-rich Si1 − xCx and composition-modulated superlattice structure. In addition, stoichiometric SiC was also investigated to comparatively analyze the characteristic differences. As a result, it was found that stoichiometric changes of the matrix material and incorporation of oxygen play key roles in light absorption controllability. Based on the results of this work and literature, a design strategy of nanocrystalline Si-embedded absorber materials for third-generation photovoltaics is discussed.

KeywordsNanocrystalline Si Solar cell Silicon carbide Light absorption Superlattice PACS 78.20. + e 78.30.Ly 78.40.Fy. Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-7-503 contains supplementary material, which is available to authorized users.

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Autor: Jihyun Moon - Seung Jae Baik - Byungsung O - Jeong Chul Lee


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