The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xInxNyAs1−y-GaAs quantum wellReportar como inadecuado




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Nanoscale Research Letters

, 7:586

International Conference on Superlattices, Nanostructures, and Nanodevices ICSNN 2012

Abstract

Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1−xInxNyAs1−y-GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.

KeywordsImpurities Quantum well Dilute nitride Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-7-586 contains supplementary material, which is available to authorized users.

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Autor: Unal Yesilgul - Fatih Ungan - Serpil Şakiroğlu - Carlos Duque - Miguel Mora-Ramos - Esin Kasapoglu - Huseyin Sari - Ismai

Fuente: https://link.springer.com/







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