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Nanoscale Research Letters

, 7:621

First Online: 12 November 2012Received: 03 October 2012Accepted: 30 October 2012

Abstract

Radial n-i-p structure silicon nanowire SiNW-based microcrystalline silicon thin-film solar cells on stainless steel foil was fabricated by plasma-enhanced chemical vapor deposition. The SiNW solar cell displays very low optical reflectance approximately 15% on average over a broad range of wavelengths 400 to 1,100 nm. The initial SiNW-based microcrystalline μc-Si:H thin-film solar cell has an open-circuit voltage of 0.37 V, short-circuit current density of 13.36 mA-cm, fill factor of 0.3, and conversion efficiency of 1.48%. After acid treatment, the performance of the modified SiNW-based μc-Si:H thin-film solar cell has been improved remarkably with an open-circuit voltage of 0.48 V, short-circuit current density of 13.42 mA-cm, fill factor of 0.35, and conversion efficiency of 2.25%. The external quantum efficiency measurements show that the external quantum efficiency response of SiNW solar cells is improved greatly in the wavelength range of 630 to 900 nm compared to the corresponding planar film solar cells.

KeywordsSilicon nanowires Microcrystalline Solar cells AbbreviationsEQEexternal quantum efficiency

FFfill factor

ITOindium tin oxide

Jscshort-circuit current density

PECVDplasma-enhanced chemical vapor deposition

SEMscanning electron microscope

SiNWsilicon nanowire

VLSvapor–liquid–solid

Vocopen-circuit voltage

μc-SiH: Hydrogenated microcrystalline silicon.

Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-7-621 contains supplementary material, which is available to authorized users.

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Autor: Xiaobing Xie - Xiangbo Zeng - Ping Yang - Hao Li - Jingyan Li - Xiaodong Zhang - Qiming Wang

Fuente: https://link.springer.com/



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