Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC 0001 - Condensed Matter > Mesoscale and Nanoscale PhysicsReportar como inadecuado




Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC 0001 - Condensed Matter > Mesoscale and Nanoscale Physics - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Abstract: Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiCsubstrates by a high temperature sublimation process. A high-k gate stack onepitaxial graphene is realized by inserting a fully oxidized nanometer thinaluminum film as a seeding layer followed by an atomic-layer depositionprocess. The electrical properties of epitaxial graphene films are sustainedafter gate stack formation without significant degradation. At lowtemperatures, the quantum-Hall effect in Hall resistance is observed along withpronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance ofgated epitaxial graphene on SiC 0001.



Autor: T. Shen, J.J. Gu, M. Xu, Y.Q. Wu, M.L. Bolen, M.A. Capano, L.W. Engel, P.D. Ye

Fuente: https://arxiv.org/







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