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Abstract: We measure charge transport in hydrogenated amorphous silicon a-Si:H usinga nanometer scale silicon MOSFET as a charge sensor. This charge detectiontechnique makes possible the measurement of extremely large resistances. Athigh temperatures, where the a-Si:H resistance is not too large, the chargedetection measurement agrees with a direct measurement of current. The devicegeometry allows us to probe both the field effect and dispersive transport inthe a-Si:H using charge sensing and to extract the density of states near theFermi energy.



Author: K. MacLean, T. S. Mentzel, M. A. Kastner

Source: https://arxiv.org/







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