Aluminum-doped zinc oxide films grown by atomic layer deposition for transparent electrode applicationsReport as inadecuate




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Journal of Materials Science: Materials in Electronics

, Volume 22, Issue 12, pp 1810–1815

First Online: 19 April 2011Received: 04 February 2011Accepted: 31 March 2011

Abstract

We obtained zinc oxide films doped with aluminum using atomic layer deposition ALD. Their morphology, growth mode, optical and electrical properties are studied. Al content dependence is analyzed. Carrier scattering mechanisms in ZnO:Al AZO films are investigated from conductivity versus temperature measurements. We also discuss how the film thickness affects its resistivity and optical transmission. The obtained film resistivities, i.e. 7 × 10 Ωcm, belong to the lowest reported so far for transparent ZnO:Al films grown by the ALD method.

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Author: G. Luka - T. A. Krajewski - B. S. Witkowski - G. Wisz - I. S. Virt - E. Guziewicz - M. Godlewski

Source: https://link.springer.com/







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