Improving the emission efficiency of MBE-grown GaN-AlN QDs by strain controlReport as inadecuate

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Nanoscale Research Letters

, 6:611

First Online: 02 December 2011Received: 06 September 2011Accepted: 02 December 2011


The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN-AlN quantum dots QDs, a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN-AlN QD samples with the proposed structure are grown by molecular beam epitaxy. The results show that by choosing a proper AlN spacer thickness to control the strain in GaN QDs, the internal quantum efficiencies have been improved from 30.7% to 66.5% and from 5.8% to 13.5% for QDs emitting violet and green lights, respectively.

KeywordsGaN QDs quantum-confined stark effect internal quantum efficiency Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-6-611 contains supplementary material, which is available to authorized users.

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Author: Lang Niu - Zhibiao Hao - Jiannan Hu - Yibin Hu - Lai Wang - Yi Luo


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