Optical characterisation of silicon nanocrystals embedded in SiO2-Si3N4 hybrid matrix for third generation photovoltaicsReportar como inadecuado




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Nanoscale Research Letters

, 6:612

First Online: 03 December 2011Received: 12 September 2011Accepted: 03 December 2011

Abstract

Silicon nanocrystals with an average size of approximately 4 nm dispersed in SiO2-Si3N4 hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed.

Keywordssilicon nanocrystals third generation photovoltaics absorption coefficient photoluminescence band gap extraction AbbreviationsPLphotoluminescence

Si NCsilicon nanocrystal

SROsilicon-rich oxide

XRDX-ray diffraction.

Electronic supplementary materialThe online version of this article doi:10.1186-1556-276X-6-612 contains supplementary material, which is available to authorized users.

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Autor: Dawei Di - Heli Xu - Ivan Perez-Wurfl - Martin A Green - Gavin Conibeer

Fuente: https://link.springer.com/







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